Development efforts into multigate transistors have been reported by the Electrotechnical Laboratory, Toshiba, Grenoble INP, Hitachi, IBM, TSMC, UC Berkeley, Infineon Technologies, Intel, AMD, Samsung Electronics, KAIST, Freescale Semiconductor, and others, and the ITRS predicted correctly that such devices will be the cornerstone of sub-32 nm technologies. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, exclusive of its careless historical conflation with Dennard scaling). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor ( MIGFET).
The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device, multi-gate MOSFET or multi-gate field-effect transistor ( MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor.
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